| Tag |
First Indicator |
Second Indicator |
Subfields |
| LEADER |
00000cam a22000008a 4500 |
| 001 |
in00000087430 |
| 005 |
20151008064757.0 |
| 008 |
801003s1981 nyua b 00110 engm |
| 010 |
|
|
|a 80025156
|
| 020 |
|
|
|a 0677055900
|
| 035 |
|
|
|a (OCoLC)06889202
|
| 035 |
|
|
|9 AAK4781AM
|
| 040 |
|
|
|a DLC
|c DLC
|d TXA
|d UtOrBLW
|
| 049 |
|
|
|a TXAM
|c [1673086]
|
| 050 |
0 |
0 |
|a TK7871.99.M44
|b D38
|
| 082 |
0 |
|
|a 621.3815/2
|2 19
|
| 100 |
1 |
|
|a Davis, J. R.
|q (John Richard),
|d 1951-
|
| 245 |
1 |
0 |
|a Instabilities in MOS devices /
|c J.R. Davis.
|
| 263 |
|
|
|a 8012
|
| 264 |
|
1 |
|a New York :
|b Gordon & Breach Science Publishers,
|c [1981]
|
| 264 |
|
4 |
|c ©1981
|
| 300 |
|
|
|a xv, 175 pages :
|b illustrations ;
|c 24 cm.
|
| 336 |
|
|
|a text
|b txt
|2 rdacontent
|
| 337 |
|
|
|a unmediated
|b n
|2 rdamedia
|
| 338 |
|
|
|a volume
|b nc
|2 rdacarrier
|
| 490 |
1 |
|
|a Electrocomponent science monographs ;
|v v. 1
|
| 500 |
|
|
|a Includes index.
|
| 504 |
|
|
|a Bibliography: pages 151-173.
|
| 650 |
|
0 |
|a Metal oxide semiconductors.
|
| 830 |
|
0 |
|a Electrocomponent science monographs ;
|v v. 1.
|
| 999 |
|
|
|a MARS
|
| 999 |
f |
f |
|s 82df2559-9fcf-3c8f-8ca7-90f91a265590
|i f5e089b8-30d1-3513-802d-f61e16068651
|t 0
|
| 952 |
f |
f |
|p ric
|a Texas A&M University
|b Rellis Campus
|c Joint Library Facility
|d Remote Storage
|t 0
|e TK7871.99.M44 D38
|h Library of Congress classification
|i unmediated -- volume
|m A14806252115
|
| 998 |
f |
f |
|a TK7871.99.M44 D38
|t 0
|l Remote Storage
|