Self-aligned submicron gate length gallium arsenide MESFET /

Bibliographic Details
Main Author:	Huang, Hsien-Ching, 1962-
Format:	Thesis eBook
Language:	English
Published:	[Place of publication not identified] : [publisher not identified] ; 1987.
Subjects:	Field-effect transistors. Gallium arsenide semiconductors. Metal semiconductor field-effect transistors. Major electrical engineering.
Online Access:	Link to OAKTrust copy

Description
Item Description:	"Major subject: Electrical Engineering." Typescript (photocopy). Vita.
Physical Description:	xiv, 119 leaves : illustrations ; 29 cm. Also available online.
Bibliography:	Bibliograhy: leaves 106-110.